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HANBit
HMD8M32M16EBG
32Mbyte(8Mx32) 72-pin EDO MODE 2K Ref. SIMM Design 5V Part No. HMD8M32M16EBG
GENERAL DESCRIPTION
The HMD8M32M16EBG is a 8M x 32bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a single In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible.
FEATURES
w Part Identification HMD8M32M16EB---- 2048 Cycles/32ms Ref. Solder HMD8M32M16EBG-- 2048 Cycles/32ms Ref. Gold w Access times : 50, 60ns w High-density 32MByte design w Single + 5V 0.5V power supply w JEDEC standard PDpin and pinout w EDO mode operation w TTL compatible inputs and outputs w FR4-PCB design PIN 1 2 3 4 5 6 7 8 9
PIN ASSIGNMENT
SYMBOL Vss DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ20 DQ5 DQ21 DQ6 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL DQ22 DQ7 DQ23 A7 NC Vcc A8 A9 /RAS3 /RAS2 NC NC NC NC Vss /CAS0 /CAS2 /CAS3 /CAS1 /RAS0 /RAS1 NC /WE PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 SYMBOL DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 DQ11 DQ27 DQ12 DQ28 Vcc DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 NC PD1 PD2 PD3 PD4 NC Vss
OPTIONS
w Timing 50ns access 60ns access w Packages 72-pin SIMM
MARKING
-5 -6
10 11 12 13 14 15
M
16 17 60ns NC Vss NC NC 18 19 20 21 22 23 24
PRESENCE DETECT PINS
Pin PD1 PD2 PD3 PD4 50ns NC Vss Vss Vss
PERFORMANCE RANGE
Speed 5 6 TRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tHPC 26ns 30ns
NC 72 SIMM TOP VIEW
Note: A11 is not used for HMD8M32M16EB
URL:www.hbe.co.kr REV.1.0 (August.2002)
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FUNCTIONAL BLOCK DIAGRAM
/CAS0 /CAS /RAS U1 /OE /W A0 -A10(A11) DQ1 DQ2 DQ3 . DQ4 DQ0-3 DQ1 DQ2 DQ3 DQ4
HMD8M32M16EBG
/RAS0
/CAS /RAS /OE A0-A10(A11) /W
U9
/RAS1
/CAS DQ1 /RAS U3 DQ2 /OE DQ3 /W A0 -A10(A11) DQ4 /CAS1 /CAS DQ1 /RAS U5 DQ2 /OE DQ3 /W A0 -A10(A11) . DQ4
DQ4-7
DQ1 DQ2 DQ3 DQ4
/CAS /RAS /OE A0-A10(A11) /W
U11
DQ8-11 DQ1 DQ2 DQ3 DQ4 /CAS /RAS /OE A0-A10(A11) /W
U13
DQ12-15 /CAS DQ1 /RAS DQ2 U7 /OE DQ3 /W A0 -A10(A11). DQ4 /CAS2 /CAS DQ1 /RAS U2 DQ2 /OE DQ3 /W A0 -A10(A11). DQ4 DQ16-19 DQ1 DQ2 DQ3 DQ4 /CAS /RAS /OE A0-A10(A11) /W DQ1 DQ2 DQ3 DQ4 /CAS /RAS /OE A0-A10(A11) /W
U15
/RAS2
U10
/RAS3
DQ20-23 /CAS DQ1 /RAS DQ2 U4 /OE DQ3 /W A0 -A10(A11). DQ4 /CAS3 DQ24-27 /CAS DQ1 /RAS DQ2 U6 /OE DQ3 /W A0 -A10(A11). DQ4 DQ1 DQ2 DQ3 DQ4 /CAS /RAS /OE A0-A10(A11) /W
DQ1 DQ2 DQ3 DQ4
U12
A0-A10(A11)
/CAS /RAS /OE /W
U14
DQ28-31 /CAS DQ1 /RAS U8 DQ2 /OE DQ3 /W A0 -A10(A11). DQ4 DQ1 DQ2 DQ3 DQ4 /CAS /RAS /OE A0-A10(A11) /W
U16
/WE A0-A10 (A11)
URL:www.hbe.co.kr REV.1.0 (August.2002) -2HANBit Electronics Co.,Ltd.
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN ,OUT Vcc PD TSTG
HMD8M32M16EBG
RATING -1V to 7.0V -1V to 7.0V 16W -55oC to 150oC
Short Circuit Output Current IOS 50mA w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( Voltage reference to VSS, TA=0 to 70 o C ) PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage SYMBOL Vcc Vss VIH VIL MIN 4.5 0 2.4 -1.0 TYP. 5.0 0 MAX 5.5 0 Vcc+1 0.8 UNIT V V V V
DC AND OPERATING CHARACTERISTICS
SYMBOL ICC1 SPEED -5 -6 ICC2 ICC3 Don't care -5 -6 ICC4 -5 -6 ICC5 ICC6 Don't care -5 -6 Il(L) IO(L) VOH VOL ICC2 : Standby Current ( /RAS=/CAS=VIH ) ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min ) ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min )
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MIN -80 -10 2.4 -
MAX 816 736 32 816 736 896 816 16 816 736 80 10 0.4
UNITS Ma MA MA MA MA MA MA MA MA MA A A V V
ICC1 : Operating Current * (/RAS , /CAS , Address cycling @tRC=min.)
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ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min )
HMD8M32M16EBG
IIL : Input Leakage Current (Any input 0V VIN 6.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V VOUT 5.5V VOH : Output High Voltage Level (IOH= -5mA ) VOL : Output Low Voltage Level (IOL = 4.2mA ) * NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle.
o
CAPACITANCE
( TA=25 C, Vcc = 5V, f = 1Mz ) SYMBOL CIN1 C IN2 CIN3 CIN4 CDQ1
o
DESCRIPTION Input Capacitance (A0-A11) Input Capacitance (/W) Input Capacitance (/RAS0) Input Capacitance (/CAS0-/CAS3) Input/Output Capacitance (DQ0-31)
MIN -
MAX 100 130 40 30 20
UNITS pF pF pF pF pF
AC CHARACTERISTICS
STANDARD OPERATION Random read or write cycle time Access time from /RAS Access time from /CAS Access time from column address /CAS to output in Low-Z Output buffer turn-off delay Transition time (rise and fall) /RAS precharge time /RAS pulse width /RAS hold time /CAS hold time /CAS pulse width /RAS to /CAS delay time
( 0 C TA 70oC , Vcc = 5V10%, See notes 1,2.) -5 SYMBOL MIN tRC tRAC tCAC tAA tCLZ tOFF tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH tASC
-4-
-6 UNIT MAX MIN 110 50 13 25 60 15 30 3 13 50 3 2 40 10K 60 15 45 10K 37 25 10 20 15 5 0 10 0 10K 45 30 10K 13 50 MAX ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
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90
3 3 2 30 50 13 38 8 20 15 5 0 10 0
/RAS to column address delay time /CAS to /RAS precharge time Row address set-up time Row address hold time Column address set-up time
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Column address hold time Column Address to /RAS lead time Read command set-up time Read command hold referenced to /CAS Read command hold referenced to /RAS Write command hold time Write command hold referenced to /RAS Write command pulse width Write command to /RAS lead time Write command to /CAS lead time Data-in set-up time Data-in hold time Refresh period Write command set-up time /CAS setup time (C-B-R refresh) /CAS hold time (C-B-R refresh) /RAS precharge to /CAS hold time Access time from /CAS precharge /CAS precharge time (Fast page) /RAS pulse width (Fast page ) /W to /RAS precharge time (C-B-R refresh) tCAH tRAL tRCS tRCH tRRH tWCH tWCR tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA tCP tRASP tWRP 8 50 10 200K 0 5 10 5 30 8 25 0 0 0 10 50 10 13 8 0 8 32
HMD8M32M16EBG
10 30 0 0 0 10 55 10 10 10 0 10 32 0 5 10 5 35 10 60 10 200K ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
/W to /RAS hold time (C-B-R refresh) tWRH 10 10 ns NOTES 1.An initial pause of 200s is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles before proper device operation is achieved. 2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3.Measured with a load equivalent to 1TTL loads and 100pF 4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC. 5.Assumes that tRCD tRCD(max) 6. tAR, tWCR, tDHR are referenced to tRAD(max) 7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH or VOL. 8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter. They are included in the data sheet as electrical characteristic only. If t WCS tWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles. 11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA.
URL:www.hbe.co.kr REV.1.0 (August.2002)
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TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE
HMD8M32M16EBG
/RAS
VIHVIL-
tRC tRAS tCRP tRCD tRAD tASR tRAH tASC tCAH
COLUMN ADDRESS
tRP
tCSH
tRSH tCAS tRAL
tCRP
/CAS
VIHVILVIH-
A
VIL-
ROW ADDRESS
VIH/W VILVIH/OE V ILVOHVOLOPEN
tRCS tAA tOEA tCAC tRAC tCLZ
tRRH
tRCH
tWEZ tCEZ
tOEZ
tREZ
DATA-OUT
DQ0-DQ7
TIMING WAVEFORM OF WRITE CYCLE (EARLY WRITE) NOTE : Dout = Open /RAS V IH-
tRC tRAS tCRP tRCD tRAD tASR tRAH tASC tCAH
COLUMN ADDRESS
tRP
VILtCSH tRSH tCAS tRAL tCRP VIHVILVIHVILROW ADDRESS
/CAS
A
tCWL tRWL tWCS tWP tWCH
VIH/W VIL-
VIH/OE VIL-
tDS
DQ0-DQ7
tDH
DATA-IN
VOHVOL-
URL:www.hbe.co.kr REV.1.0 (August.2002)
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PACKAGING INFORMATION
SIMM Design
HMD8M32M16EBG
0.25 mm MAX
2.54 mm MIN
1.27 mm
Gold : 1.040.10 mm Solder:0.9140.10mm
1.27 0.08mm
ORDERING INFORMATION
Component Number 16EA 16EA
Part Number
Density
Org.
Package
Vcc
Access Time
HMD8M32M16EBG-5 HMD8M32M16EBG-6
32MByte 32MByte
8MX 32bit 8MX 32bit
72Pin-SIMM 72Pin-SIMM
5V 5V
50ns 60ns
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